data sheet semiconductor http://www.yeashin.com 1 rev.02 20130917 1ss355 fl-a 200mw sod-323 surface moun t s mall outline flat lead plastic package high speed switching diode a bsolute maximum ratings t a = 25c unless otherwise noted symb ol parameter value units p d po wer dissipation 200 mw t st g sto rage temperature range -65 to +150 c t j o perating junction temperature +150 c v r rever se voltage 80 v v rm repe titive peak reverse voltage 90 v i fm for ward current 250 ma i o cont inuous forward current 150 ma i fr m repe titive peak forward current 500 ma t hese ratings are limiting values above which the serviceability of the diode may be impaired. spe cification features: ? hi gh speed switching device ( t rr < 4.0 ns) ? g eneral purpose diodes ? flat lead sod-323 small outline plastic package ? surface device ty pe mounting ? m oisture sensitivity level 1 ? cl ip bonding construction, good thermal capability ? pb free version and rohs compliant ? m atte tin(sn) lead finish with nickel(ni) underplate ? band indi cates cathode elec trical characteristics t a = 25c unless otherwise noted limits symb ol parameter test condition min max unit b v b reakdown voltage i r =100 a 80 volts i r reverse leakag e current v r =80 v 100 na v f f orward voltage i f = 100ma 1.2 volts t rr rev erse recovery time i f =1 0ma v r =6 v r l =100 ? 4 n s c capacitance v r =0.5 v, f=1m hz 4 pf electr ical symbol c athode anode s od-323 flat lead halogen free ? dev ice marking codes: device type device marking 1s s355 fl ????? s4 h aec-q 101 qualified base p/n - rohs compliant, commercial grade base p/n-a - rohs compliant, aec-q101 qualified ?
http://www.yeashin.com 2 rev.02 20130917 device characteristics total capacitance forward voltage vs ambient temperature 1ss355 fl-a
http://www.yeashin.com 3 rev.02 20130917 device characteristics reverse current vs reverse voltagereverse 1ss355 fl-a
http://www.yeashin.com 4 rev.02 20130917 package outline and dimensions 1ss355 fl-a
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